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  ? 1/8 table 1: main product characteristics damper modul. i f(av) 6 a 6 a v rrm 1500 v 600 v t rr (typ) 150 ns 60 ns v f (typ) 1.1 v 1.0 v DMV1500SD damper + modulation diode for video 1 2 3 to-220fpab DMV1500SDfd damper 123 modulation 1 2 3 to-220fpab fd6 DMV1500SDfd6 (optional) october 2004 rev. 1 features and benefits full kit in one package high breakdown voltage capability very fast recovery diode specified turn on switching characteristics low static and peak forward voltage drop for low dissipation insulated version: insulated voltage = 2000 v rms capacitance = 7 pf planar technology allowing high quality and best electrical characteristics outstanding performance of well proven dtv as damper and new faster turbo 2 600v technology as modulation description high voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with e/w correction. the insulated to-220fpab package includes both the damper diode and the modulation diode, thanks to a dedicated design. assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. table 2: order codes part number marking DMV1500SDfd DMV1500SD DMV1500SDfd6 DMV1500SD
DMV1500SD 2/8 table 3: absolute ratings (limiting values, per diode) table 4: thermal resistances table 5: static electrical characteristics pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the maximum conduction losses of the damper and modulation diodes use the following equations : damper: p = 1.2 x i f(av) + 0.050 x i f 2 (rms) modulation: p = 0.89 x i f(av) + 0.055 x i f 2 (rms) table 6: recovery characteristics symbol parameter value unit damper modul. v rrm repetitive peak reverse voltage 1500 600 v i fsm surge non repetitive forward current tp = 10ms sinusoidal 50 50 a t stg storage temperature range -40 to +150 c t j maximum operating junction temperature 150 c symbol parameter value (max.) unit r th(j-c) junction to case thermal resistance 4 c/w symbol parameter test conditions value unit t j = 25c t j = 125c typ. max. typ. max. i r * reverse leakage current damper v r = 1500 v 100 100 1000 a modul. v r = 600 v 3330 v f ** forward voltage drop damper i f = 6 a 1.2 1.75 1.1 1.5 v modul. i f = 6 a 1.15 1.4 1 1.25 symbol parameter test conditions value unit damper modul. typ. max. typ. max. t rr reverse recovery time i f = 100ma i r =100ma i rr = 10ma t j = 25c 1000 2000 250 400 ns i f = 1a di f /dt = -50 a/s v r =30v t j = 25c 150 250 60 85
DMV1500SD 3/8 table 7: turn-on switching characteristics symbol parameter test conditions value unit typ. max. t fr forward recovery time damper i f = 6 a di f /dt = 80 a/s v fr = 3 v t j = 100c 350 500 ns modul. i f = 6 a di f /dt = 80 a/s v fr = 2 v t j = 100c 70 125 v fp peak forward voltage damper i f = 6 a di f /dt = 80 a/s t j = 100c 26 36 v modul. i f = 6 a di f /dt = 80 a/s t j = 100c 57.5 figure 1: power dissipation versus peak forward current (triangular waveform, =0.45) (damper diode) figure 2: power dissipation versus peak forward current (triangular waveform, =0.45) (modulation diode) figure 3: average forward current versus ambient temperature figure 4: forward voltage drop versus forward current (damper diode) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 p (w) f(av) i (a) p 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 p (w) f(av) i (a) p 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 i (a) f(av) damper diode modulation diode t =tp/t tp r= th(j-a) r th(j-c) t (c) amb 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i (a) fm v (v) fm t =125c (typical values) j t =125c (maximum values) j t =25c (maximum values) j
DMV1500SD 4/8 figure 5: forward voltage drop versus forward current (modulation diode) figure 6: relative variation of thermal impedance junction to case versus pulse duration figure 7: reverse recovery charges versus di f /dt (damper diode) figure 8: reverse recovery charges versus di f / dt (modulation diode) figure 9: peak reverse recovery current versus di f /dt (damper diode) figure 10: peak reverse recovery current versus di f /dt (modulation diode) 0 1 2 3 4 5 6 7 8 9 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i (a) fm v (v) fm t =125c (typical values) j t =125c (maximum values) j t =25c (maximum values) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 z/r th(j-c) th(j-c) t (s) p damper diode modulation diode single pulse 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 100.0 q (c) rr di /dt(a/s) f i= t =125c f j i p 0 50 100 150 200 250 300 0.1 1.0 10.0 100.0 q (nc) rr di /dt(a/s) f i= t =125c f j i p 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.1 1.0 10.0 i (a) rm di /dt(a/s) f i= t =125c f j i p 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 100.0 i (a) rm di /dt(a/s) f i= t =125c f j i p
DMV1500SD 5/8 figure 11: transient peak forward voltage versus di f /dt (damper diode, typical values) figure 12: transient peak forward voltage versus di f /dt (modulation diode, typical values) figure 13: forward recovery time versus di f /dt (damper diode, typical values) figure 14: forward recovery time versus di f /dt (modulation diode, typical values) figure 15: relative variation of dynamic parameters versus junction temperature figure 16: junction capacitance versus reverse voltage applied (typical values) 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200 v (v) fp di /dt(a/s) f i= t =100c f j i p 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 v (v) fp di /dt(a/s) f i= t =100c f j i p 0 100 200 300 400 500 600 700 800 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr i= t =100c v f j i =3v p fr di /dt(a/s) f 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr i= t =100c v f j i =2v p fr di /dt(a/s) f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 q rr t (c) j v fp i rm i,v,q [t]/ rm fp rr j i , v , q [t =125c] rm fp rr j 1 10 100 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j damper diode modulation diode
DMV1500SD 6/8 figure 17: to-220fpab fd6 option package mechanical data figure 18: to-220fpab fd6 pcb layout (typical, in millimeters) h l2 l6 g g1 f d m1 m2 e l7 l4 l5 l3 a b dia 7.9 2.54 2.2 7.5 1.0 ref. dimensions millimeters inches min. max. min. max. a 4.4 4.9 0.173 0.192 b 2.5 2.9 0.098 0.114 d 2.45 2.75 0.096 0.108 e 0.4 0.7 0.016 0.028 f 0.6 1 0.024 0.039 g 4.95 5.2 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.7 0.394 0.421 l2 12.7 12.8 0.500 0.504 l3 4.8 typ. 0.189 typ. l4 3.8 4.2 0.150 0.165 l6 2.8 3.2 0.110 0.126 l7 9 9.9 0.354 0.390 m1 3.75 typ. 0.148 typ. m2 7 8 0.276 0.315 r 1 typ. 0.039 typ. dia. 2.9 3.5 0.114 0.138
DMV1500SD 7/8 figure 19: to-220fpab package mechanical data table 8: ordering information part number marking package weight base qty delivery mode DMV1500SDfd DMV1500SD to-220fpab 2.4 g 50 tube DMV1500SDfd6 DMV1500SD to-220fpab fd6 2.4 g 45 tube table 9: revision history date revision description of changes 25-oct-2004 1 first issue ref. dimensions millimeters inches min. max. min. max. a 4.4 4.9 0.173 0.192 b 2.5 2.9 0.098 0.114 d 2.45 2.75 0.096 0.108 e 0.4 0.7 0.016 0.027 f 0.6 1 0.024 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.7 0.393 0.421 l2 16 typ. 0.630 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.7 0.385 0.421 l6 15.8 16.4 0.622 0.646 l7 9 9.9 0.354 0.390 dia. 2.9 3.5 0.114 0.138
DMV1500SD 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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